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The UTC UF540 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed.
$ 3.40000 3.4000000000000004 USD
The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and high speed switching applications.
$ 10.00000 10.0 USD
The UTC UT80P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UT80P06 is suitable for load switch, etc.
$ 5.00000 5.0 USD
The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
$ 6.00000 6.000000000000001 USD
The UTC UTT80N08 is a N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc.
$ 4.60000 4.6000000000000005 USD
The UTC UTG40N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG40N65-S is suitable for the resonant or soft switching applications.
$ 11.40000 11.4 USD
The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N60 is suitable for the resonant or soft switching applications.
$ 17.00000 17.0 USD
The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching AC/DC converters, and DC motor control.
$ 0.40000 0.4 USD
The UTC UT3434 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.
$ 0.25000 0.25 USD
The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.
$ 0.32000 0.32 USD
The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM.
$ 0.60000 0.6000000000000001 USD
The UTC ES1A thru ES1J is a surface mount glass superfast recovery rectifier, it uses UTC’s advanced technology to provide customers with low power loss and high efficiency, etc.
$ 0.36000 0.36000000000000004 USD
The UT9435 is P-channel enhancement mode Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
$ 0.60000 0.6000000000000001 USD
The UTC UT3434 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.
$ 0.20000 0.2 USD
The UTC MBR1100 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, low reverse current and high efficiency, etc. The UTC MBR1100 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes.
$ 0.30000 0.30000000000000004 USD
The UTC UT02P06 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT02P06 is suitable for high voltage switching applications.
$ 0.14000 0.14 USD
These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to -0.13A DC and can deliver current up to -0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.
$ 0.20000 0.2 USD
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
$ 0.25000 0.25 USD
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
$ 0.20000 0.2 USD
The UTC BSS123 is an N-channel mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with low CRSS. The UTC BSS123 is suitable for Automotive and Other Applications Requiring.
$ 0.44000 0.44000000000000006 USD