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The UTC ES1A thru ES1J is a surface mount glass superfast recovery rectifier, it uses UTC’s advanced technology to provide customers with low power loss and high efficiency, etc.
$ 0.36000 0.36000000000000004 USD
The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and polarity protection, etc.
$ 0.38000 0.38 USD
The UTC UT4N06 is N-Channel enhancement mode silicon gate power MOSFET, In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
$ 0.80000 0.8 USD
The UTC UT3430 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UT3430 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
$ 0.46000 0.46 USD
The UTC ES2A THRU ES2J is a surface mount super fast rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC ES2A THRU ES2J is suitable for surface mounted applications.
$ 0.54000 0.54 USD
The UTC ES2A THRU ES2J is a surface mount super fast rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC ES2A THRU ES2J is suitable for surface mounted applications.
$ 0.44000 0.44000000000000006 USD
The UTC GS1M is a surface mount general rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC GS1M is suitable for surface mounted applications.
$ 0.30000 0.30000000000000004 USD
The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications.
$ 22.00000 22.000000000000004 USD
The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
$ 0.52000 0.52 USD
The UTC UT3415 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT3415 is suitable for high voltage switching applications.
$ 0.60600 0.6060000000000001 USD
The UTC UTZ24N is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTZ24N is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks.
$ 0.80000 0.8 USD
The UTC UTZ44 is an N-channel mode Power MOSFET, utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. using UTC’s advanced technology to combined with the fast switching speed and ruggedized device design, provides the designer with an extremely efficient device for use in a wide variety of applications.
$ 2.90000 2.9000000000000004 USD
The UTC UTT30P06Z is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.
$ 1.36000 1.36 USD
The UTC UTT65N20 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT65N20 is suitable for high voltage synchronous rectifier and AC/DC converters, etc.
$ 13.60000 13.600000000000001 USD
The UTC UFP264 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UFP264 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.
$ 20.00000 20.0 USD
The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
$ 8.40000 8.4 USD
The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
$ 2.72000 2.72 USD
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
$ 6.80000 6.800000000000001 USD
The UTC 11N40-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
$ 3.20000 3.2 USD
The UTC UF630-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF630-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.
$ 2.40000 2.4000000000000004 USD