UTC

Unisonic Technologies Co., Ltd. is a world-class leader in integrated circuits and power semiconductors

UTC

Unisonic Technologies Co., Ltd. is a world-class leader in integrated circuits and power semiconductors. Headquartered in Taipei, the company has production bases in Fuzhou and Xiamen. Unisonic has a rich portfolio of power and analog component product lines, quality-certified chip and packaging factories, and strong service and design development capabilities, providing customers with the best product competitiveness.


TC (Unisonic Technologies Company Ltd.) established in 1990, is a global leading integrated circuit and power semiconductor manufacturer. The group's headquarters is located in Taipei, with production facilities in Fuzhou and Xiamen.

With over 2300 employees worldwide, UTC is dedicated to the research, design, wafer fabrication, packaging, testing, and marketing of analog ICs and discrete components. The company has operated for years with an IDM integrated device manufacturing business model, possessing a rich product line of power and analog components to offer comprehensive solutions to customers. With professional design, qualified wafer fabs and packaging factories, and robust service support, UTC aims to provide customers with optimal product competitiveness and maximize economic benefits through vertical integration advantages.

UTC owns three chip fabrication plants and one packaging and testing facility, adopting a proactive IDM vertical  integration, ensuring capacity, production control, and technological independence, showcasing the company's competitive strength. The management system adheres to international standards ISO-9001, ISO 14001, and IATF16949, and collaborations with top-tier clients continually elevate quality management and efficiency.

The comprehensive product line of UTC includes various analog ICs, such as regulators, PWM control ICs, amplifiers, comparators, logic ICs, voltage translators, interface driver ICs, transistor arrays, reset ICs, and Hall effect switches. The range of discrete components covers high and low voltage MOSFETs, SJMOS, diodes, BJT, FRD, TRIAC, SCR, IGBT, and more. Leveraging deep R&D experience and a professional IC design team, the company consistently develops circuits and enhances production technology to deliver faster, efficient, and customer-oriented products.

UTC's products find extensive applications in power management equipment, photovoltaic inverters, energy storage, PLC, variable frequency servo, charging piles, machine tools, and commercial machinery. They are also used in consumer electronics, including appliances, TVs, lighting, communication devices, security, smart homes, and computers. In the field of new energy vehicle electronics, UTC excels in performance and quality, earning recognition from global brands and partners. With a commitment to providing the best products and services, UTC looks forward to partnering with customers to create a brighter future together.


FEATURED PRODUCTS:

HIGH CONDUCTANCE ULTRA
FAST DIODE

HIGH CONDUCTANCE ULTRA FAST DIODE

BAV99G-AE3-R

HIGH CONDUCTANCE ULTRA FAST DIODE

SCHOTTKY BARRIER DIODE
* Schottky barrier chip
* Low power loss, high efficiency.
* Low forward voltage drop.
* High surge current capability.
* For use in low voltage, high frequency inverters, free wheeling
diode, and polarity protection applications.

SCHOTTKY BARRIER DIODE * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

1N5819G-CA2-R

SCHOTTKY BARRIER DIODE * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

The UT3N01Z uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.

The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.

UT3N01ZG-AE2-R

The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.

The UTC 1N4004G is a glass passivated silicon rectifier, it uses
UTC’s advanced technology to provide customers with high forward
surge current and low reverse leakage, etc.

The UTC 1N4004G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

1N4004GL-Z41-B

The UTC 1N4004G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.

The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

75N75G-TA3-T

The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

The UTC BAS21 is a general purpose diode using UTC’s
planar technology to provide customers with high current
capacity and high switching speed.

The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed.

BAS21G-AE2-R

The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed.

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