UTC

Unisonic Technologies Co., Ltd. is a world-class leader in integrated circuits and power semiconductors. Headquartered in Taipei, the company has production bases in Fuzhou and Xiamen. Unisonic has a rich portfolio of power and analog component product lines, quality-certified chip and packaging factories, and strong service and design development capabilities, providing customers with the best product competitiveness.

Our Products
HIGH CONDUCTANCE ULTRA FAST DIODE
NPN GENERAL PURPOSE AMPLIFIER * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA.
Planar Schottky barrier diodes are encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
Planar Schottky barrier diodes are encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
SCHOTTKY BARRIER DIODE * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.
SCHOTTKY RECTIFIER * For surface mounted applications * Low forward voltage drop (VF=0.50V Typ. at 0.5A) * Guard ring for transient and ESD protection
The 4P50 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching AC/DC converters, and DC motor control.
The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.
The UT9435 is P-channel enhancement mode Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The UTC 11N40-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
The UTC 1N4004G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.
The UTC 1N4007G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.
The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package.
The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package.
The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.
The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
The UTC B540C is a schottky barrier rectifier; It provides the customers high efficiency and low power loss. The UTC B540C is suitable for automatic assembly high frequency inverters and low voltage application, etc.
The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed.
The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed.
The UTC BAS316 is high-speed diode, it uses UTC’s advanced technology to provide customers with high switching speed, etc. The UTC BAS316 is suitable for high-speed switching in e.g. surface mounted circuits.
The UTC BSS123 is an N-channel mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with low CRSS. The UTC BSS123 is suitable for Automotive and Other Applications Requiring.
The UTC ES1A thru ES1J is a surface mount glass superfast recovery rectifier, it uses UTC’s advanced technology to provide customers with low power loss and high efficiency, etc.
The UTC ES1A thru ES1J is a surface mount glass superfast recovery rectifier, it uses UTC’s advanced technology to provide customers with low power loss and high efficiency, etc.
The UTC ES2A THRU ES2J is a surface mount super fast rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC ES2A THRU ES2J is suitable for surface mounted applications.
The UTC ES2A THRU ES2J is a surface mount super fast rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC ES2A THRU ES2J is suitable for surface mounted applications.
The UTC GS1M is a surface mount general rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc. The UTC GS1M is suitable for surface mounted applications.
The UTC MBR1100 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, low reverse current and high efficiency, etc. The UTC MBR1100 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes.
The UTC MBR1100 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, low reverse current and high efficiency, etc. The UTC MBR1100 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes.
The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and polarity protection, etc.
The UTC MMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaial planar process and packed in plastic surface mount package.
The UTC SB5100 is a 5.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with high surge capability, high current capability and high efficiency, etc. The UTC SB5100 is suitable for use in free wheeling, high frequency inverters, low voltage and polarity protection applications.
The UTC SK24 is a Schottky Rectifier with high current capacity, ultra low thermal resistance, Low reverse leakage and low forward voltage. The UTC SK24 is suitable for surface mount applications.
The UTC SK34 is a Schottky Rectifier with high current capacity, ultra low thermal resistance, Low reverse leakage and low forward voltage. The UTC SK34 is suitable for surface mount applications.
The UTC SK34 is a Schottky Rectifier with high current capacity, ultra low thermal resistance, Low reverse leakage and low forward voltage. The UTC SK34 is suitable for surface mount applications.
The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UF5210 is suitable for all commercial-industrial applications, etc.
The UTC UF540 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed.
The UTC UF630-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF630-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.
The UTC UF640-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF640-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.
The UTC UFP264 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UFP264 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.
The UTC UG15N41 is a Logic Level Insulated Gate Bipolar Transistor features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG15N41 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.
The UTC US1M is a surface mount ultra fast rectifier, it uses UTC’s advanced technology to provide customers with ultra fast switching, high forward surge current and low reverse leakage, etc. The UTC US1M is suitable for surface mounted applications.
The UTC UT02P06 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT02P06 is suitable for high voltage switching applications.
The UTC UT03P06 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT03P06 is suitable for high voltage switching applications.
The UTC UT150N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM.
The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM.
The UTC UT3415 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT3415 is suitable for high voltage switching applications.
The UTC UT3430 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UT3430 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
The UTC UT3434 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.
The UTC UT3434 is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This device can be operated with 4.5V low gate voltage.
The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.
The UTC UT4N06 is N-Channel enhancement mode silicon gate power MOSFET, In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
The UTC UT5N04M is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits
The UTC UT80P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UT80P06 is suitable for load switch, etc.
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
The UTC UTG40N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG40N65-S is suitable for the resonant or soft switching applications.
The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N60 is suitable for the resonant or soft switching applications.
The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications.
The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and high speed switching applications.
The UTC UTT15N10M-Q is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT15N10M-Q is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
The UTC UTT30P06Z is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.
The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications.
The UTC UTT65N20 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC UTT65N20 is suitable for high voltage synchronous rectifier and AC/DC converters, etc.
The UTC UTT80N08 is a N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc.
The UTC UTT80N10H is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT80N10H applies to primary side switch, synchronous rectifier, Motor Drives, etc.
The UTC UTZ24N is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTZ24N is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks.
The UTC UTZ24N is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTZ24N is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks.
The UTC UTZ44 is an N-channel mode Power MOSFET, utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. using UTC’s advanced technology to combined with the fast switching speed and ruggedized device design, provides the designer with an extremely efficient device for use in a wide variety of applications.
These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to -0.13A DC and can deliver current up to -0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.