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SIM8230 is a Multi-Band 5G NR/LTE-FDD/LTE-TDD module which supports R17 5G SA.
$ 26.05000 26.05 USD
SIM8230 MR is a Multi-Band 5G NR/LTE-FDD/LTE-TDD module which supports R17 5G SA.
$ 26.05000 26.05 USD
SIM8260A-M2 is a Multi-Band 5G NR/LTE-FDD/LTE-TDD/HSPA+ module which supports R16 5G NSA/SA.
$ 26.05000 26.05 USD
SIM8260G-M2 is a Multi-Band 5G NR/LTE-FDD/LTE-TDD/HSPA+ module which supports R16 5G NSA/SA.
$ 26.05000 26.05 USD
The SIM8380G-M2 is the Multi-Band 5G NR/LTE-FDD/LTE-TDD/HSPA+ module which supports R16 5G NSA/SA.
$ 26.05000 26.05 USD
The SIM8970 series is the LTE Cat 6 smart module with Android system, it adopts Qualcomm 8-core 64-bit ARM V-8 processor, with frequency up to 2.0GHz and AdrenoTM 610 GPU. It supports multiple high resolution camera and high definition touch display, and has powerful high data transfer and multimedia processing capability. With smart module operation system and high performance advantage, the module is ideal for rapid development of multimedia wireless communication products and applications.
$ 26.05000 26.05 USD
SIM8230 is a Multi-Band 5G NR/LTE-FDD/LTE-TDD module which supports R17 5G SA.
$ 26.05000 26.05 USD
The UTC 24NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.
$ 14.84000 14.840000000000002 USD
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
$ 7.20000 7.2 USD
The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.
$ 4.60000 4.6000000000000005 USD
The UTC UT03P06 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT03P06 is suitable for high voltage switching applications.
$ 0.26000 0.26 USD
The UTC UG15N41 is a Logic Level Insulated Gate Bipolar Transistor features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG15N41 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.
$ 4.60000 4.6000000000000005 USD
The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications.
$ 3.60000 3.6 USD
The UTC MBR1100 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, low reverse current and high efficiency, etc. The UTC MBR1100 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes.
$ 0.38000 0.38 USD
The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
$ 0.68000 0.68 USD
The UTC UTZ24N is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTZ24N is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks.
$ 1.86000 1.86 USD
The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UF5210 is suitable for all commercial-industrial applications, etc.
$ 5.20000 5.2 USD
The UTC UF640-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF640-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.
$ 5.30000 5.300000000000001 USD
The UTC UT150N06H uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
$ 5.60000 5.6000000000000005 USD
The UTC UTT15N10M-Q is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT15N10M-Q is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
$ 1.72000 1.7200000000000002 USD